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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg HAN C PARAMETER Open base Fig.1 simplified outline (TO-3PN) and symbol IN Collector-base voltage SEM GE CONDITIONS OND IC TOR UC VALUE -40 -40 -5 -15 -5 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 80 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB757 SYMBOL MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.8 V VBEsat Base-emitter on voltage IC=-5A; IB=-0.5A -1.8 V ICBO Collector cut-off current VCB=-40V; IE=0 -10 |I A IEBO Emitter cut-off current hFE Switching times DC current gain VEB=-5V; IC=0 -100 |I A IC=-5A ; VCE=-2V ton Turn-on time ts Storage time HAN INC SEM GE OND IC 2% TOR UC 40 240 1.0 |I s 2.0 |I s IC=-15A;IB1=-IB2=-1.5A RL=2| ;PW=20|I s,DutyU tf Fall time 1.0 |I s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB757 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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